• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A fingerprint sensor (120) having a plurality of elementary acquisition cells (121) disposed in and / or on a substrate, each cell comprising: a pyroelectric conversion element (PYR) having first and second electrodes separated by a layer of a pyroelectric material, the first electrode being connected to a node (GND) for applying a reference potential of the sensor, and the second electrode being connected to a reading node (SN) of the cell ; and a third electrode (EL) connected to the reading node (SN) and coated with a dielectric layer, the third electrode being adapted to form a capacitance with the skin of a user.
    公开号:FR3035728A1
    申请号:FR1553923
    申请日:2015-04-30
    公开日:2016-11-04
    发明作者:Jean-Francois Mainguet；Joel Yann Fourre；Puchades Josep Segura
    申请人:Commissariat a lEnergie Atomique CEA；Safran SA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The present application relates to fingerprint or palmar sensors, and, more generally, skin portion fingerprint sensors. More particularly, it relates to the field of pyroelectric sensors for the detection of fingerprints of skin portions. DISCUSSION OF THE PRIOR ART Various types of sensors have been proposed for performing an electronic acquisition of a print of a portion of skin, that is to say to provide an image of the pattern formed by the ridges and valleys (or hollow) of the skin. In particular, optical sensors, capacitive sensors, pyroelectric sensors, ultrasonic sensors, and electric field sensors have been proposed.
    [0002] Of particular interest here are pyroelectric fingerprint sensors, that is to say having a plurality of elementary acquisition cells (or pixels), each cell comprising a pyroelectric conversion element having two electrodes separated by a layer. of a pyroelectric material. There is a need to improve at least some aspects of known pyroelectric sensors.
    [0003] SUMMARY For this, an embodiment provides a fingerprint sensor comprising a plurality of elementary acquisition cells arranged in and / or on a substrate, each cell comprising: a pyroelectric conversion element comprising first and second electrodes separated by a layer of a pyroelectric material, the first electrode being connected to an application node of a reference potential of the sensor, and the second electrode being connected to a reading node of the cell; and a third electrode connected to the reading node and coated with a dielectric layer, the third electrode being adapted to form a capacitance with the skin of a user. According to one embodiment, in each cell, the third electrode is disposed such that only the dielectric layer separates the third electrode from a surface of the sensor to be contacted with the skin of a user. According to one embodiment, in each cell, the third electrode is disposed on the side of the pyroelectric layer opposite to the substrate. According to one embodiment, in each cell, the third electrode is connected to the reading node via a conductive via passing through the pyroelectric layer. According to one embodiment, the dielectric layer has a thickness less than 50 fun and preferably less than 2 lem. According to one embodiment, the second and third electrodes are merged. According to one embodiment, in each cell, the first electrode is connected to an array of conductive tracks disposed on the side of the pyroelectric layer opposite to the substrate via a conductive via passing through the pyroelectric layer.
    [0004] According to one embodiment, each cell further comprises a reset transistor connecting the read node to an application node of a reset potential.
    [0005] According to one embodiment, in each cell, the read node is connected to an output track of the cell via a follower source transistor and a read transistor. According to one embodiment, the sensor further comprises a controllable heat source. BRIEF DESCRIPTION OF THE DRAWINGS These and other features and advantages will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying figures in which: FIG. illustrating an example of a pyroelectric fingerprint sensor; Fig. 2 is an electrical diagram illustrating an example of an embodiment of a pyroelectric fingerprint sensor; Figure 3 is a sectional view illustrating an embodiment of a pyroelectric fingerprint sensor of the type described in relation to Figure 1; Figure 4 is a sectional view illustrating an exemplary embodiment of a pyroelectric fingerprint sensor of the type described in connection with Figure 2; and FIG. 5 is a sectional view illustrating another example of a more detailed embodiment of a pyroelectric impression sensor of the type described with reference to FIG. 2.
    [0006] DETAILED DESCRIPTION The same elements have been designated with the same references in the various figures and, in addition, the various figures are not drawn to scale. For the sake of clarity, only those elements which are useful for understanding the described embodiments have been shown and are detailed. In particular, the peripheral circuits for controlling the elementary cells of the described impression sensors have not been detailed, the production of such circuits being within the abilities of those skilled in the art on reading the present description. . Moreover, when architectures of elementary cells, elementary cell matrices or fingerprint sensors are described, the term "connected" is used to designate a direct electrical connection, without intermediate electronic component, for example by means of one or more conductive tracks and / or one or more conductive vias, and the term "coupled" or the term "connected", to designate a direct electrical connection (thus meaning connected) or via one or more intermediate components, by example via a transistor. Furthermore, in the following description, when reference is made to absolute position qualifiers, such as the terms "forward", "backward", "up", "down", "left", "right" , etc., or relative, such as the terms "above", "below", "upper", "lower", etc., or with qualifiers for orientation, such as the terms "horizontal", "vertical", etc., reference is made to the orientation of the figures. Unless otherwise specified, the terms "approximately", "substantially", and "of the order of" mean within 10%, preferably within 5%. Fig. 1 is an electrical diagram illustrating an example of a pyroelectric fingerprint sensor 110. The sensor 110 comprises a plurality of identical or similar elementary acquisition cells 111. The cells 111 are for example made in TFT (Thin Film Transistor) technology on a dielectric support substrate, or in and on a monocrystalline semiconductor substrate, for example a silicon substrate. Subsequently, the surface of the substrate on the side of which the elementary acquisition cells 111 of the sensor are arranged will conventionally be called the upper face of the substrate. For the sake of simplification, a single cell 111 has been shown in FIG.
    [0007] Each cell 111 comprises a pyroelectric conversion element PYR comprising two conductive layers or electrodes, for example metal layers, separated by a layer of a pyroelectric material, for example aluminum nitride (AlN), zinc (ZnO), a polymer such as polyvinylidene fluoride (PVDF) or one of its copolymers, for example PVDF-TrFE (trifluoroethylene) whose pyroelectric coefficient is of the order of 30 pC / m 2 / K, a ceramic material of the PZT (lead titanozirconate) type, the pyroelectric coefficient of which is of the order of 350 pC / m 2 / K, or a crystalline material of the TGS (Triglycine sulfate) or LiTaO 3 type. A first electrode of the pyroelectric conversion element PYR is connected to a capacitive node SN for reading the cell, the second electrode of the element PYR being connected to an application node of a reference potential GND, by example the mass. In practice, the capacity of the node SN comprises the capacity of the pyroelectric conversion element PYR, to which are added the parasitic capacitances of one or more transistors of the cell connected to the node SN. In the example shown, each cell 111 comprises a reset transistor RT connecting its read node SN to an application node of a reset potential VRT, for example a positive potential with respect to the potential of the node GND. Each cell 111 further comprises a follower-source transistor SF, whose gate is connected to the SN node, and a read transistor RD connecting the source of the transistor SF to an output track CL of the cell. The drain of the transistor SF is connected to an application node of a reference potential, for example the potential VRT or another potential greater than the potential GND. The control gate of transistor RT is connected to a VGRT node for applying a control potential of this transistor, and the gate of transistor RD is connected to a node VGRD for applying a control potential of this transistor .
    [0008] The output track CL of the cell 111 is connected to an output stage 113 of the sensor. In this example, the output stage 113 comprises an amplifier 115 having an input connected to the track CL and whose output is connected to an analog-to-digital converter 116 (ADC). The amplifier 115 is optional, and may especially be omitted if the potential level of the CL track is compatible with the input of the analog-to-digital converter 116. The sensor 110 further comprises a heat source, not shown. By way of example, the heat source may comprise an array of heating resistors regularly distributed over the surface of the sensor. By way of example, the heat source comprises an elementary cell resistance, this resistor being arranged in the vicinity of the pyroelectric element 15 of the cell. The resistors of the heat source are for example disposed on the same side of the substrate as the cells 111, that is to say on the side of the upper face of the substrate. More generally, any heat source adapted to heat the pyroelectric conversion elements PYR of the sensor can be used. For example, the heat source may be a source by optical heating. If the substrate is transparent, the source can then be disposed on the side of the substrate opposite to the cells 111. The heat source can for example comprise light-emitting diodes, a laser, a Xenon flash, etc.
    [0009] The radiation emitted by the source is absorbed by the electrodes and / or the pyroelectric layer, thereby producing heat. An advantage of such heating is that the heat source can be relatively far away from the acquisition cells 111, thereby reducing the electromagnetic coupling. In addition, it is possible, by choosing a suitable wavelength, to directly heat the pyroelectric material in its volume. The operation of the sensor 110 is as follows. The user having placed a portion of skin (eg a finger) on or above the top surface of the sensor (side 3035728 7 cells 111), the heat source of the sensor is turned on, and heats the elements. pyroelectric conversion PYR which consequently generate electrical charges on the SN reading nodes of the corresponding cells 111. The amount of heat received by each pyroelectric conversion element PYR when the heat source is on is greater when the corresponding cell is surmounted by a valley of the skin than when it is surmounted by a ridge. Indeed, when the cell is surmounted by a ridge, the skin (which is a relatively good thermal conductor) absorbs a larger share of the heat emitted by the source than when the cell is surmounted by a valley. Thus, when a cell is surmounted by a valley of the skin, the amount of electrical charges generated on its reading node SN is greater than when the cell is surmounted by a peak. During a phase of acquisition of an image point of a fingerprint by a cell 111, the read node SN of the cell is first reset via the transistor RT of the cell. The transistor RT is then blocked, and during an integration period, charges generated by the pyroelectric conversion element PYR accumulate on the read node SN of the cell, which varies its potential. At the end of the integration, the potential of the read node SN is transferred to the output track CL of the cell via transistors SF and RD. For this, the transistor RD of the cell is turned on. The potential of the output track CL is then read by the output stage 113 associated with the output track CL. The potential of the read node can also be read after the reset and before the start of the integration, the output value of the pixel then being the difference between the reference value read before the integration and the value read after the integration. integration. Preferably, during an acquisition, the heat source is controlled to produce a heat pulse, and the cells are read a certain time after the start of the pulse, and / or shortly after the end. the pulse, so as to overcome the phenomena of thermalization leading, over time, the standardization of the charge levels accumulated on the reading nodes SN of the different cells.
    [0010] By way of example, several elementary cells 111 can be connected to the same output track CL and share a same output stage 113 of the sensor. The cells 111 are for example arranged in a matrix according to rows and columns, the cells of one and the same column being connected to the same output track CL and to the same output stage 113, and the separate column cells being connected. separate output tracks CL and separate output stages 113. For example, the cells 111 are controllable simultaneously line by line, that is to say that the cells 111 of the same line have their nodes VGRT, respectively VGRD, connected to the same control track and the cells 111 of distinct lines have their nodes VGRT, respectively VGRD, connected to separate control tracks. Preferably, the heat source is then controllable to heat cells 111 line by line. This makes it possible to scan the sensor line by line by synchronizing the ignition of the heat source with the reading of the cells, and thus to minimize the effects of the thermalization on the acquired image. In this case, the heat source may be constituted by conductive tracks 25 extending along the lines of the sensor, for example metal tracks (for example made of molybdenum or aluminum), tracks made of a metal oxide, possibly transparent (for example indium tin oxide or indium zinc), polycrystalline silicon tracks, or tracks made of a conductive polymer.
    [0011] In practice, it can be seen that with sensors of the type described in connection with FIG. 1, under certain conditions of use or for certain types of skin, it may be difficult to acquire images of good quality, it is that is to say, to discriminate properly the peaks of the valleys 35 of the skin. In fact, it is observed that, in some cases, the output value of a cell surmounted by a ridge of the skin is very close to the output value of a cell surmounted by a valley of the skin, which makes it difficult to exploit the images acquired by the sensor.
    [0012] According to one aspect of an embodiment, it is provided to amplify the voltage level difference on the SN reading node between a cell surmounted by a crest of the skin and a cell surmounted by a valley of the skin, in connecting to the reading node SN an electrode coated with a dielectric layer, this electrode being arranged to form a capacitance with the skin of the user. FIG. 2 is an electrical diagram illustrating an example of an embodiment of a pyroelectric fingerprint sensor 120. The sensor 120 of FIG. 2 comprises elements common to the sensor 110 of FIG. will not be described again. The sensor 120 differs from the sensor 110 mainly in that, in the sensor 120, elementary acquisition cells 121 replace the elementary acquisition cells 111 of the sensor 110. The elementary cells 121 of the sensor of FIG. elements that the elementary cells 111 of the sensor of FIG. 1, connected substantially in the same manner, and differ from the elementary cells 111 of the sensor of FIG. 1 in that each cell 121 of the sensor of FIG. 2 further comprises an electrode EL coated with a dielectric layer, intended to form a capacitance with the skin of a user, this electrode being connected to the reading node SN of the cell. The EL electrode is placed in the vicinity of the upper surface of the sensor, so that only a dielectric layer (which may be a stack of several dielectric layers), for example a layer of thickness less than 50 fun and preferably lower at 2 pin, separates the electrode EL from the upper surface of the sensor, that is to say the surface against which is pressed the finger of the user during an acquisition. In particular, the electrode EL is preferably disposed on the side of the pyroelectric layer opposite to the substrate (i.e., above the upper face of the pyroelectric layer). The sensor of FIG. 2 can be controlled identically or similarly to what has been described in connection with FIG. 1. The sensor of FIG. 2 has the advantage of allowing a better discrimination between the peaks and valleys of FIG. the skin that a sensor of the type described in relation to Figure 1. Indeed, when acquiring an image of 10 the imprint of the skin portion disposed on the upper surface of the sensor, the capacity of the node SN reading is not the same in all cells of the sensor, since it includes the capacitance formed between the EL electrode and the skin of the user, which varies depending on whether the cell is surmounted by a valley or by a crest of the skin. In the case where a cell is surmounted by a valley of the skin, that is to say that the skin is relatively far from the EL electrode, the capacitance formed between the EL electrode and the skin is lower than when the cell is surmounted by a crest of the skin. Thus, the capacity of the SN reading node is lower in a cell 121 surmounted by a valley of the skin than in a cell surmounted by a crest of the skin. In other words, the charge-to-voltage conversion factor is higher in a cell 121 surmounted by a valley of the skin than in a cell 25 surmounted by a crest of the skin. However, during a thermal reading, the amount of charges generated by the pyroelectric element is higher in a cell surmounted by a valley of the skin than in a cell surmounted by a crest of the skin. The presence of the EL electrode, forming with the user's skin a capacity which adds to the capacity of the SN node, thus has the effect of amplifying the potential difference sought on the node SN between the cells overcome. by a ridge and the cells surmounted by a valley of the skin (because the presence of a valley generates more loads on a lower capacity 3035728 11 therefore a higher potential difference than on a peak, with less load and a higher capacity). In practice, the cell can be made such that the electrode of the PYR element connected to the read node SN of the cell is disposed adjacent to the upper surface of the sensor and is separated from the upper surface of the sensor only by a dielectric layer, for example less than 50 fun thick and preferably less than 2 gm. In this case, the electrode EL can be confused with the electrode of the PYR element connected to the reading node SN. FIG. 3 is a simplified sectional view illustrating an exemplary embodiment of a pyroelectric impression sensor 110 of the type described with reference to FIG. 1. The sensor cells 111 are formed in and / or on a substrate 301, for example a dielectric substrate or a semiconductor substrate. In Figure 3, only four cells 111 of the sensor have been shown. In addition, in FIG. 3, in each cell 111, only the pyroelectric element PYR of the cell has been shown. The transistors RT, SF and RD of the cells 111, not shown in FIG. 3, are for example formed on the upper surface of the substrate 301 in the case of a TFT type technology, or in and on the substrate 301 in the case of a monocrystalline silicon type technology. In each cell 111, the pyroelectric conversion element PYR is disposed above the upper surface of the substrate 301, and comprises, in order from the upper surface of the substrate 301, a lower electrode Ei connected to the node SN reading of the cell, a layer 303 of a pyroelectric material, and an upper electrode Es connected to the node 30 for applying the reference potential GND. In practice, in this example, the pyroelectric layer 303 and the upper electrode layer Es are continuous layers coating substantially the entire surface of the sensor, and the lower electrode layer Ei is a discontinuous layer 35 (i.e. that is, the lower electrodes Ei of the pyroelectric conversion elements PYR of the different cells 111 are not connected to each other). In the vicinity of an edge of the sensor, the upper electrode layer Es is connected to a metal plate 305 intended to be soldered to an external connection element 311, for example a conductive wire. The metal plate 305 is disposed facing a surface of the substrate 301 uncoated by the pyroelectric layer 303. This arrangement facilitates the realization of the welding between the plate 305 and the element 311.
    [0013] Indeed, such a weld would be more difficult to achieve if the connection plate 305 was disposed above the pyroelectric layer 303, because of the relative flexibility of the layer 303 (especially in the case of the PVDF which has the consistency soft plastic).
    [0014] FIG. 4 is a simplified sectional view illustrating an exemplary embodiment of a pyroelectric impression sensor 120 of the type described with reference to FIG. 2. As in the example of FIG. 3, the cells 121 of FIG. The sensors are formed in and / or on a substrate 301, for example a dielectric substrate or a semiconductor substrate. In FIG. 4, only four cells 121 of the sensor have been shown. In addition, as in the example of FIG. 3, the transistors RT, SF and RD of the cells have not been represented. In each cell 121, the pyroelectric conversion element PYR is disposed above the upper surface of the substrate 301, and comprises a stack comprising, in order from the upper surface of the substrate 301, a lower electrode E1. , a layer 303 of a pyroelectric material, and an upper electrode Es. The electrodes E 1 and E are formed in distinct conductive levels, and are respectively in contact with the lower face and with the upper face of the layer 303. The upper electrode Es is connected to the reading node SN of the cell by the and a conductive region 403 formed in the same conductive level as the lower electrode Ei but not connected to the electrode Ei. The lower electrode Ei is connected to the GND node for applying the reference potential of the sensor. In the example 5 shown, the lower electrode E 1 is connected, via a conductive via 407 passing through the layer 303, to a network 409 of interconnected conductive tracks formed in the same conductive level as the upper electrodes Es, but not connected to the electrodes Es. The network of conductive tracks 409 forms, for example, a grid separating, seen from above, the pyroelectric conversion elements PYR of the different cells. The network of conductive tracks 409 is itself connected to the metal plate 305 for connection to the outside.
    [0015] An advantage of this arrangement is that the network of conductive tracks 409 placed in the vicinity of the upper surface of the sensor makes it possible to protect the sensor against possible electrostatic discharges. In this example, in each cell 121, the upper electrode Es of the pyroelectric conversion element PYR is merged with the electrode EL for forming a capacitance with the skin of the user. In each cell 121, the electrode Es is coated with a dielectric layer, not shown in FIG. 4, constituting the dielectric of the capacitance formed with the skin. FIG. 5 is a sectional view illustrating another example of a more detailed embodiment of a cell 121 of the sensor of FIG. 2. More particularly, FIG. 5 represents the pyroelectric element PYR, the node SN, the electrode EL, and the reset transistor RT of the cell. In this figure, the SF and RD transistors of the cell have not been shown. In the example of Figure 5, the cell 121 is formed in TFT technology on a dielectric substrate 501, for example glass. A localized layer 503 of a semiconductor material, for example polycrystalline silicon, is disposed above the upper surface of the substrate 501. The transistor RT, as well as the SF and RD transistors (not shown), are formed in and on the semiconductor layer 503. In particular, the source and drain regions and channel forming regions of the transistors of the cell are formed in the layer 503. Heating resistors, not shown, forming the source of heat of the sensor, can also be formed in the layer 503 (for example a resistance per cell). Alternatively, the heating resistors may be formed in a conductive layer of the structure, for example in the metallization level M4 described hereinafter. The gate of the transistor RT is formed in a first level of metallization Ml surmounting the layer 503 and separated from the layer 503 by an insulating layer forming the gate oxide of the transistor RT. The source and drain electrodes of transistor RT are formed in a second level of metallization M2 overcoming the level M1. The lower electrode Ei of the pyroelectric element PYR, connected to the application node of the reference potential GND, is formed in a third level of metallization M3 overcoming the level M2.
    [0016] This electrode is coated with a layer 505 of a pyroelectric material. The layer 505 is coated by the upper electrode Es of the pyroelectric element PYR, formed in a fourth level of metallization M4. In this example, the second electrode (upper electrode) of the pyroelectric element PYR is merged with the electrode EL, and is connected to a source or drain electrode of the transistor RT (level M2) via a via 507. The source or drain electrode of the transistor RT connected to the EL electrode defines the read node SN of the cell, and is connected to the gate of the transistor RD (not shown). An insulating layer 509 takes on the level of metallization M4. The layer 509 forms the dielectric of the capacitance between the EL electrode and the skin of the user. The upper surface of the layer 509 is intended to be brought into contact with the skin of which it is desired to acquire an impression. By way of example, the layer 509 has a thickness of less than or equal to 50 μm, and preferably less than or equal to 2 μm. Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, the described embodiments are not limited to the particular example of an elementary cell electrical diagram shown in FIG. 2. The embodiments described can in particular be adapted to elementary cells comprising a number of control transistors 10. different from 3 or in which the arrangement of the control transistors is different. In addition, the described embodiments are not limited to the particular examples of elementary cell structures described in connection with FIGS. 4 and 5. Those skilled in the art will be able to achieve the desired effect by providing other arrangements of the invention. pyroelectric conversion element PYR and the EL electrode for forming a capacitance with the skin of the user. In particular, those skilled in the art will be able to provide arrangements in which the EL electrode is not merged with an electrode of the PYR pyroelectric conversion element. Moreover, those skilled in the art will be able to adapt the described embodiments to conversion elements other than pyroelectric conversion elements. By way of example, in the embodiments described, the pyroelectric element PYR 25 may be replaced by a photoelectric conversion element, for example a photodiode (for example of the PIN type). In this case, the EL electrode for forming a capacitance with the skin of the user can be connected to one of the electrodes of the photoelectric conversion element. Preferably, the EL electrode is then connected to amplify the difference in voltage level on the SN reading node between a cell surmounted by a crest of the skin and a cell surmounted by a valley of the skin. In particular, the electrode EL can be connected so that the presence of a valley 35 produces more electrical charges than the presence of a peak, so as to benefit from the voltage reduction caused simultaneously by the contribution additional electrical capacity and the reduction of loads generated by the proximity of the skin in the case of a ridge.
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A fingerprint sensor (120) having a plurality of elementary acquisition cells (121) disposed in and / or on a substrate (301; 501), each cell comprising: a pyroelectric conversion element (PYR) having first ( Ei) and second (Es) electrodes separated by a layer (303; 505) of a pyroelectric material, the first electrode (Ei) being connected to a node (GND) for applying a reference potential of the sensor, and the second electrode (Es) being connected to a read node (SN) of the cell; and a third electrode (EL) connected to the read node (SN) and coated with a dielectric layer (509), the third electrode being adapted to form a capacitance with the skin of a user.
    [0002]
    The sensor (120) according to claim 1, wherein, in each cell (121), the third electrode (EL) is disposed such that only the dielectric layer (509) separates the third electrode (EL) from a sensor surface intended to be brought into contact with the skin of a user.
    [0003]
    The sensor (120) according to claim 1 or 2, wherein in each cell (121) the third electrode (EL) is disposed on the side of the pyroelectric layer (303) opposite the substrate (301; 501).
    [0004]
    The sensor (120) according to any one of claims 1 to 3, wherein in each cell the third electrode (EL) is connected to the read node (SN) via a conductive via ( 401) passing through the pyroelectric layer (303).
    [0005]
    The sensor (120) according to any one of claims 1 to 4, wherein the dielectric layer (509) is less than 50 μm thick and preferably less than 2 μm thick.
    [0006]
    6. Sensor (120) according to any one of claims 1 to 5, wherein the second (Es) and third (EL) electrodes are combined. 3035728 18
    [0007]
    The sensor (120) according to any one of claims 1 to 6, wherein in each cell the first electrode (Ei) is connected to a conductive path array (409) disposed on the side of the pyroelectric layer (303). ) opposed to the substrate (301; 501) via a conductive via (407) passing through the pyroelectric layer (303).
    [0008]
    The sensor (120) according to any one of claims 1 to 7, wherein each cell (121) further comprises a reset transistor (RT) connecting the read node (SN) to an application node of a reset potential (VRT) -
    [0009]
    The sensor (120) according to any one of claims 1 to 8, wherein in each cell (121) the read node (SN) is connected to an output track (CL) of the cell by the intermediate of a transistor (SF) mounted as a source follower and a read transistor (RD).
    [0010]
    The sensor (120) of any one of claims 1 to 9, further comprising a controllable heat source.
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    法律状态:
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    FR1553923A|FR3035728B1|2015-04-30|2015-04-30|PYROELECTRIC SENSOR FOR THE DETECTION OF IMPRESSIONS|FR1553923A| FR3035728B1|2015-04-30|2015-04-30|PYROELECTRIC SENSOR FOR THE DETECTION OF IMPRESSIONS|
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    US15/569,075| US10586088B2|2015-04-30|2016-04-27|Pyroelectric sensor for the detection of skin prints|
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